SchÃ¤pers, Th : rechercher sur Z-Library

Le plus grand référentiel d'articles scientifiques au monde. 70,000,000+ d'articles gratuitement.

Don't use scam websites

Livres
Articles (30)
Les plus populaires
Liste
- Liste
- Tableau

1

Flux Quantization Effects in InN Nanowires

Richter, Thomas, Blömers, Christian, Lüth, Hans, Calarco, Raffaella, Indlekofer, Michael, Marso, Michel, Schäpers, Thomas

Journal:

Année:

2008

Langue:

english

Fichier:

PDF, 679 KB

english, 2008

2

Effect of electron-electron interaction on hot ballistic electron beams

Schäpers, Th., Krüger, M., Appenzeller, J., Förster, A., Lengeler, B., Lüth, H.

Journal:

Applied Physics Letters

Année:

1995

Langue:

english

Fichier:

PDF, 283 KB

english, 1995

3

Electronic Phase Coherence in InAs Nanowires

Blömers, Ch., Lepsa, M. I., Luysberg, M., Grützmacher, D., Lüth, H., Schäpers, Th.

Journal:

Année:

2011

Langue:

english

Fichier:

PDF, 2.79 MB

english, 2011

4

Hall effect measurements on InAs nanowires

Blömers, Ch., Grap, T., Lepsa, M. I., Moers, J., Trellenkamp, St., Grützmacher, D., Lüth, H., Schäpers, Th.

Journal:

Applied Physics Letters

Année:

2012

Langue:

english

Fichier:

PDF, 1.13 MB

english, 2012

5

Distortions of the coulomb blockade conductance line in scanning gate measurements of inas nanowire based quantum dots

Zhukov, A. A., Volk, Ch., Winden, A., Hardtdegen, H., SchÃ¤pers, Th.

Journal:

Journal of Experimental and Theoretical Physics

Année:

2013

Langue:

english

Fichier:

PDF, 1.79 MB

english, 2013

6

Weak antilocalization in a polarization-doped Al[sub x]Ga[sub 1−x]N∕GaN heterostructure with single subband occupation

Thillosen, N., Schäpers, Th., Kaluza, N., Hardtdegen, H., Guzenko, V. A.

Journal:

Applied Physics Letters

Année:

2006

Langue:

english

Fichier:

PDF, 521 KB

english, 2006

7

Low- and high-field transport properties of pseudomorphic InxGa1−xAs/InP (0.73≤x≤0.82) p-type modulation-doped single-quantum-well structures

Mesquida Küsters, A., Kohl, A., Heime, K., Schäpers, Th., Uhlisch, D., Lengeler, B., Lüth, H.

Journal:

Journal of Applied Physics

Année:

1994

Langue:

english

Fichier:

PDF, 1.33 MB

english, 1994

8

Hybrid superconductor/semiconductor step junctions with three terminals

Lachenmann, S. G., Kastalsky, A., Förster, A., Uhlisch, D., Neurohr, K., Schäpers, Th.

Journal:

Journal of Applied Physics

Année:

1998

Langue:

english

Fichier:

PDF, 367 KB

english, 1998

9

Universal conductance fluctuations and localization effects in InN nanowires connected in parallel

Alagha, S., Hernández, S. Estévez, Blömers, C., Stoica, T., Calarco, R., Schäpers, Th.

Journal:

Journal of Applied Physics

Année:

2010

Langue:

english

Fichier:

PDF, 939 KB

english, 2010

10

Andreev reflection and enhanced subgap conductance in NbN∕Au∕InGaAs-InP junctions

Batov, I. E., Schäpers, Th., Golubov, A. A., Ustinov, A. V.

Journal:

Journal of Applied Physics

Année:

2004

Langue:

english

Fichier:

PDF, 328 KB

english, 2004

11

Demonstration of a current-controlled three-terminal Nb–In[sub x]Ga[sub 1−x]As/InP Josephson contact

Schäpers, Th., Malindretos, J., Neurohr, K., Lachenmann, S., van der Hart, A., Crecelius, G., Hardtdegen, H., Lüth, H., Golubov, A. A.

Journal:

Applied Physics Letters

Année:

1998

Langue:

english

Fichier:

PDF, 353 KB

english, 1998

12

Quantized conductance in a split-gate point contact based on a pseudomorphic InGaAs/InP heterostructure

Tietze, M. F., Schäpers, Th., Appenzeller, J., Engels, G., Hollfelder, M., Lengeler, B., Lüth, H.

Journal:

Journal of Applied Physics

Année:

1996

Langue:

english

Fichier:

PDF, 314 KB

english, 1996

13

Temperature dependence of the phase-coherence length in InN nanowires

Blömers, Ch., Schäpers, Th., Richter, T., Calarco, R., Lüth, H., Marso, M.

Journal:

Applied Physics Letters

Année:

2008

Langue:

english

Fichier:

PDF, 628 KB

english, 2008

14

Josephson effect in Nb/two-dimensional electron gas structures using a pseudomorphic In[sub x]Ga[sub 1−x]As/InP heterostructure

Schäpers, Th., Kaluza, A., Neurohr, K., Malindretos, J., Crecelius, G., van der Hart, A., Hardtdegen, H., Lüth, H.

Journal:

Applied Physics Letters

Année:

1997

Langue:

english

Fichier:

PDF, 360 KB

english, 1997

15

Josephson supercurrent in Nb/InN-nanowire/Nb junctions

Frielinghaus, R., Batov, I. E., Weides, M., Kohlstedt, H., Calarco, R., Schäpers, Th.

Journal:

Applied Physics Letters

Année:

2010

Langue:

english

Fichier:

PDF, 553 KB

english, 2010

16

Preparation of transparent Nb/two-dimensional electron gas contacts by using electron cyclotron resonance plasma cleaning

Schäpers, Th., Müller, R. P., Crecelius, G., Hardtdegen, H., Lüth, H.

Journal:

Journal of Applied Physics

Année:

2000

Langue:

english

Fichier:

PDF, 503 KB

english, 2000

17

Suppression of the surface-inversion layer of p-type InAs

Lachenmann, S. G., Friedrich, I., Förster, A., Schäpers, Th., Kastalsky, A.

Journal:

Journal of Applied Physics

Année:

1999

Langue:

english

Fichier:

PDF, 406 KB

english, 1999

18

Optimization of modulation-doped Ga1−xInxAs/InP heterostructures towards extremely high mobilities

Hardtdegen, Hilde, Meyer, R., Hollfelder, M., Schäpers, Th., Appenzeller, J., Lo̸ken-Larsen, Hilde, Klocke, Th., Dieker, Christel, Lengeler, B., Lüth, H., Jäger, W.

Journal:

Journal of Applied Physics

Année:

1993

Langue:

english

Fichier:

PDF, 1.00 MB

english, 1993

19

Properties of the two-dimensional electron gas in modulation-doped GaInAs(P)/InP structures grown by low-pressure metalorganic vapor-phase epitaxy

Grützmacher, D., Meyer, R., Balk, P., Berg, C., Schäpers, T., Lüth, H., Zachau, M., Koch, F.

Journal:

Journal of Applied Physics

Année:

1989

Langue:

english

Fichier:

PDF, 1.03 MB

english, 1989

20

Supercurrent in Nb/InAs-nanowire/Nb Josephson junctions

Günel, H. Y., Batov, I. E., Hardtdegen, H., Sladek, K., Winden, A., Weis, K., Panaitov, G., Grützmacher, D., Schäpers, Th.

Journal:

Journal of Applied Physics

Année:

2012

Langue:

english

Fichier:

PDF, 1.33 MB

english, 2012

21

Measurement of effective electron mass in biaxial tensile strained silicon on insulator

Feste, S. F., Schäpers, Th., Buca, D., Zhao, Q. T., Knoch, J., Bouhassoune, M., Schindlmayr, Arno, Mantl, S.

Journal:

Applied Physics Letters

Année:

2009

Langue:

english

Fichier:

PDF, 353 KB

english, 2009

22

Magnetic and structural properties of GaN thin layers implanted with Mn, Cr, or V ions

Guzenko, V. A., Thillosen, N., Dahmen, A., Calarco, R., Schäpers, Th., Houben, L., Luysberg, M., Schineller, B., Heuken, M., Kaluza, A.

Journal:

Journal of Applied Physics

Année:

2004

Langue:

english

Fichier:

PDF, 458 KB

english, 2004

23

Phase-coherence and symmetry in four-terminal magnetotransport measurements on InN nanowires

Frielinghaus, R., Estévez Hernández, S., Calarco, R., Schäpers, Th.

Journal:

Applied Physics Letters

Année:

2009

Langue:

english

Fichier:

PDF, 898 KB

english, 2009

24

Rashba effect in InGaAs∕InP parallel quantum wires

Guzenko, V. A., Knobbe, J., Hardtdegen, H., Schäpers, Th., Bringer, A.

Journal:

Applied Physics Letters

Année:

2006

Langue:

english

Fichier:

PDF, 535 KB

english, 2006

25

Observation of quantized conductance in split-gate In[sub 0.53]Ga[sub 0.47]As/In[sub 0.77]Ga[sub 0.23]As/InP point contacts using Cr/Au p-InP Schottky barriers

Schäpers, Th., Appenzeller, J., Hardtdegen, H., Lüth, H.

Journal:

Journal of Applied Physics

Année:

1998

Langue:

english

Fichier:

PDF, 325 KB

english, 1998

26

Adjustment of the critical current in a Nb–In[sub x]Ga[sub 1−x]As/InP Josephson contact by light exposure

Schäpers, Th., Müller, R. P., Kaluza, A., Hardtdegen, H., Lüth, H.

Journal:

Applied Physics Letters

Année:

1999

Langue:

english

Fichier:

PDF, 360 KB

english, 1999

27

Preparation of Ohmic contacts to GaAs/AlGaAs-core/shell-nanowires

Wirths, S., Mikulics, M., Heintzmann, P., Winden, A., Weis, K., Volk, Ch., Sladek, K., Demarina, N., Hardtdegen, H., Grützmacher, D., Schäpers, Th.

Journal:

Applied Physics Letters

Année:

2012

Langue:

english

Fichier:

PDF, 1.54 MB

english, 2012

28

[AIP PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006 - Vienna (Austria) (24-28 July 2006)] AIP Conference Proceedings - Spin-splitting characterization of an InGaSb 2DEG by using magnetoresistance measurements with tilted magnetic fields

Akabori, M., Guzenko, V. A., Kakegawa, T., Sato, T., Schäpers, Th., Suzuki, T., Yamada, S.

Année:

2007

Langue:

english

Fichier:

PDF, 472 KB

english, 2007

29

Visualization and investigation of the non-thermalized electrons in an InAs nanowire by scanning gate microscopy

Zhukov, A A, Volk, Ch, Winden, A, Hardtdegen, H, SchÃ¤pers, Th

Journal:

Journal of Physics Condensed Matter

Année:

2019

Fichier:

PDF, 1.01 MB

2019

30

Quantum Transport in Topological Surface States of Selectively Grown Bi 2 Te 3 Nanoribbons

Rosenbach, Daniel, Oellers, Nico, Jalil, Abdur Rehman, Mikulics, Martin, KÃ¶lzer, Jonas, Zimmermann, Erik, Mussler, Gregor, Bunte, Stephany, GrÃ¼tzmacher, Detlev, LÃ¼th, Hans, SchÃ¤pers, Thomas

Journal:

Advanced Electronic Materials

Année:

2020

Fichier:

PDF, 5.71 MB

2020